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Cohesive Properties of Semiconductors under Laser Irradiation

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Proceedings of the NATO Advanced Study Institute on Cohesive Properties of Semiconductors under Laser Irradiation, Corsica, France, July 19-30, 1982

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Titel: Cohesive Properties of Semiconductors under Laser Irradiation
Autoren/Herausgeber: L.D. Laude (Hrsg.)
Aus der Reihe: NATO Science Series E
Ausgabe: 1983

ISBN/EAN: 9789024728572

Seitenzahl: 633
Format: 0 x 0 cm
Produktform: Hardcover/Gebunden
Gewicht: 1,000 g
Sprache: Englisch

The impact of Materials Science in our environment has probably never been as massive and decisive as it is today. In every aspect of our lives, progress has never been so dependent on the techniques involved in producing ever more sophisticated materials in ever larger quantities, nor so demanding for technologists to imagine novel processes and circumvent difficulties, or take up new challenges. Every technique is based on a physical process which is put into practice and optimized. The better we know that process, the better the optimization, and more powerful the technique. Laser processing of materials is inscribed in that context. As soon as powerful coherent light sources were made available, it was realized that such intense sources of energy could be used to "heat, melt and crystallize" materials, i.e., to promote phase transitions in atomic systems. As early as 1964, attempts in that direction were made but received very little (if any) attention. Reasons for this lack of interest were several. For one thing, laser technology was not fully developed, so that the process offered poor reliability and no versatility. Also, improving the existing techniques was believed to be sufficient to meet the needs of the time, and there was no real motivation to explore new ways. Finally, and more important, the fundamentals of the physics behind the scenes were, and continue to be, way out of the runni~g stream.

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