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Short-Circuit Ruggedness of High-Voltage IGBTs

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Kurzbeschreibung

One of the biggest advantages of the IGBT, is its inherent capability to limit the external current in case of a short-circuit event. Until now, the failure mechanism that limits the short-circuit capability of high voltage buffer-type IGBTs has not been fully understood. The experimental data show that the most common short-circuit failure type cannot be explained by any known failure mechanism such as cell latch-up, avalanche breakdown or thermal runaway. The goal of this thesis was to find the destruction mechanism that limits the short-circuit capability of the investigated high voltage IGBTs. This was achieved by using a combination of device simulations and experimental investigations of3.3kV, 4.5kV and 6.5kV IGBTs.

Details
Schlagworte

Titel: Short-Circuit Ruggedness of High-Voltage IGBTs
Autoren/Herausgeber: Arnost Kopta
Aus der Reihe: Berichte aus der Elektrotechnik
Ausgabe: 1., Aufl.

ISBN/EAN: 9783832293833

Seitenzahl: 167
Format: 21 x 14,8 cm
Produktform: Buch
Gewicht: 251 g
Sprache: Englisch

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